AlInP benchmarks for growth of AlGaInP compounds by organometallic vapor-phase epitaxy

Abstract We have demonstrated that source material and growth system purity can be successfully evaluated by characterizing AlInP samples grown by organometallic vapor-phase epitaxy with photocurrent versus voltage measurements in an electrochemical cell. The samples can be grown and characterized in about 1 h, making them well-suited for system benchmarks. Zn-doped AlInP has the greatest sensitivity for O contamination, a recurring problem in the growth of AlGaInP alloys. High O concentrations in the Zn-doped benchmarks cause the photoresponse to fall dramatically. Secondary ion mass spectrometry data are consistent with compensation of Zn acceptor states by O donor-like trap states. Photocurrents of Si-doped and Se-doped AlInP are less sensitive to the O contamination, and the behavior of these n-type samples suggests that multiple energy states can be associated with the O impurities and dopant atoms. The benchmarks have been used to identify O contamination in trimethyl indium and phosphine and to evaluate new growth systems. Application of the benchmark to growth of GaInP solar cells with AlInP window layers is also discussed.

[1]  J. C. Chen,et al.  Effects of trimethylindium on the purity of In0.5Al0.5P and In0.5Al0.5as epilayers grown by metalorganic chemical vapor deposition , 1997 .

[2]  Sarah R. Kurtz,et al.  29.5%‐efficient GaInP/GaAs tandem solar cells , 1994 .

[3]  H. Terao,et al.  Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs , 1984 .

[4]  H. Asahi,et al.  Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy , 1986 .

[5]  W. S. Hobson,et al.  Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane , 1990 .

[6]  M. Razeghi,et al.  Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions , 1989 .

[7]  C. Nozaki,et al.  A deep level in Zn‐doped InGaAlP , 1989 .

[8]  Daniel J. Friedman,et al.  Accelerated publication 30.2% efficient GaInP/GaAs monolithic two‐terminal tandem concentrator cell , 1995 .

[9]  S. Kurtz,et al.  Purity and purification of source materials for III–V MOCVD , 1988 .

[10]  N. Grote,et al.  Doping characteristics of undoped and Zn-doped in(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy , 1994 .

[11]  C. W. Magee,et al.  Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis , 1989 .

[12]  Miyoko O. Watanabe,et al.  Se‐related deep levels in InGaAlP , 1986 .

[13]  Hiroshi Kurita,et al.  Over 30% efficient InGaP/GaAs tandem solar cells , 1997 .

[14]  M. Okajima,et al.  Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition , 1993 .

[15]  G. Y. Robinson,et al.  On-site phosphine purification for gas-source MBE of InGaAlP , 1993 .

[16]  Toshiaki Tanaka,et al.  Effect of cap layer and cooling atmosphere on the hole concentration of p(Zn)-AlGaInP grown by organometallic vapor phase epitaxy , 1992 .

[17]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[18]  David E. Aspnes,et al.  RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES , 1983 .

[19]  J. Sites,et al.  Solar-cell collection efficiency and its variation with voltage , 1994 .

[20]  G. Hatakoshi,et al.  Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition , 1992 .

[21]  Makoto Kondo,et al.  Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy , 1994 .

[22]  Mariko Suzuki,et al.  Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor deposition , 1991 .

[23]  C. Button,et al.  The incorporation of oxygen into InAlAs, the role of trimethylindium (TMI) , 1994 .

[24]  D. Lang,et al.  Nonradiative capture and recombination by multiphonon emission in GaAs and GaP , 1977 .

[25]  G. B. Stringfellow,et al.  The effect of oxygen incorporation in semi‐insulating (AlxGa1−x)yIn1−yP , 1992 .

[26]  Masaki Okajima,et al.  Reduction of residual oxygen incorporation and deep levels by substrate misorientation in InGaAlP alloys , 1993 .