A genetic neural network modeling of GaN HEMTs for RF power amplifiers design
暂无分享,去创建一个
[1] Dorothea Heiss-Czedik,et al. An Introduction to Genetic Algorithms. , 1997, Artificial Life.
[2] Fadhel M. Ghannouchi,et al. Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design , 2011 .
[3] K. Webb,et al. A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC , 2004, IEEE Transactions on Microwave Theory and Techniques.
[4] A. Santarelli,et al. Compact Empirical Modeling of Nonlinear Dynamic Thermal Effects in Electron Devices , 2008, IEEE Transactions on Microwave Theory and Techniques.
[5] Umesh K. Mishra,et al. GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.
[6] John C. Roberts,et al. Symposium Y: Gan and Related Alloys MOCVD AlGaN/GaN HFETs on Si: Challenges and Issues , 2003 .
[7] E. Kohn,et al. Switching behaviour of GaN-based HFETs: thermal and electronic transients , 2002 .
[8] A. Z. Markos,et al. Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers , 2011, IEEE Transactions on Microwave Theory and Techniques.
[9] Walter Kruppa,et al. Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .
[10] C. Camacho-Peñalosa,et al. Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies , 1985 .
[11] Melanie Mitchell,et al. An introduction to genetic algorithms , 1996 .
[12] G. Kompa,et al. Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion , 2007, IEEE Transactions on Electron Devices.
[13] Qi-Jun Zhang,et al. Neural Networks for RF and Microwave Design , 2000 .