Electrochemical Surface Transfer Doping The Mechanism Behind the Surface Conductivity of Hydrogen-Terminated Diamond

Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10 -5 Ω -1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 10 13 cm -2 , and it has already been utilized for a unique kind of field effect transistor [H. Kawarada, Surf. Sci. Rep., 26, 205 (1996)]. Although the microscopic doping mechanism is still under debate. Based on the results of a variety of surface-sensitive experiments we propose a new surface-transfer doping mechanism by which electron transfer from the valence band to adsorbed, hydrated ionic species at the surface creates the holes for the surface conductivity. In order to draw a complete picture of the surface conductivity concepts from surface and semiconductor physics as well as electrochemistry have to be adopted.

[1]  L. Ley,et al.  Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum , 2004 .

[2]  Florian Maier,et al.  Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces , 2001 .

[3]  Amos Breskin,et al.  Effect of moderate heating on the negative electron affinity and photoyield of air-exposed hydrogen-terminated chemical vapor deposited diamond , 2001 .

[4]  Riedel,et al.  Origin of surface conductivity in diamond , 2000, Physical review letters.

[5]  W. Beyer,et al.  Influence of adsorbates on the surface conductivity of chemical vapor deposition diamond , 2000 .

[6]  E. Kohn,et al.  Hypothesis on the conductivity mechanism in hydrogen terminated diamond films , 2000 .

[7]  R. Gi,et al.  Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO2 and NH3 Atmospheres , 1999 .

[8]  H. Kawarada,et al.  High-preformance diamond surface-channel field-effect transistors and their operation mechanism , 1999 .

[9]  Jingbiao Cui,et al.  DEHYDROGENATION AND THE SURFACE PHASE TRANSITION ON DIAMOND (111) : KINETICS AND ELECTRONIC STRUCTURE , 1999 .

[10]  Jingbiao Cui,et al.  Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface , 1998 .

[11]  N. Sato.  CHAPTER 10 – SEMICONDUCTOR PHOTOELECTRODES , 1998 .

[12]  H. Okushi,et al.  Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films , 1997 .

[13]  Hiroshi Kawarada,et al.  Hydrogen-terminated diamond surfaces and interfaces , 1996 .

[14]  Masamori Iida,et al.  Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films , 1995 .

[15]  Nakajima,et al.  High-field cyclotron resonance and valence-band structure in semiconducting diamond. , 1993, Physical review. B, Condensed matter.

[16]  K. V. Ravi,et al.  Hydrogen passivation of electrically active defects in diamond , 1989 .

[17]  K. V. Ravi,et al.  Resistivity of chemical vapor deposited diamond films , 1989 .