论文信息 - Internal photoemission in hydrogenated amorphous‐Si films

Internal photoemission in hydrogenated amorphous‐Si films

Measurements of internal photoemission from metal contacts into amorphous SiHx are reported. The height of the barriers at Cr, Pd, and Pt contacts were found to be 0.83, 0.98, and 1.12 eV, respectively, from the photoemission threshold.

G. Cody | B. Abeles | T. Tiedje | C. Wronski

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