GaNyAs1-x-yBix alloy was grown by molecular beam epitaxy. The lattice matching between the GaNyAs1-x-yBix epilayer and the GaAs substrate was achieved by adjusting the N composition used in this experiment. Photoluminescence (PL) at the wavelength of 1.3 µm was observed at room temperature for the GaNyAs1-x-yBix epilayer lattice matched to the GaAs substrate. The temperature coefficient of the PL peak energy for this GaNyAs1-x-yBix epilayer in the temperature range of 150–300 K was 0.14 meV/K which was much smaller than the temperature dependence of the band gap of GaInAsP alloy.