High Detectivity D* = 1.0 X 10 10 cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector

We report the first high detectivity, (D* = 1.0 X 1010 cm √Hz/W), high responsivity (Rv = 30,000 V/W), GaAs/A1),Gai_xAs multiquantum well detector, sensitive in the long wavelength infrared band (LWIR) at λ = 8.3 μm (operating at a temperature of T = 77K). Due to the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high speed GaAs FETs, large focal plane arrays of these detectors should be possible.