论文信息 - First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure - 字舞流文

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

C. Nguyen | N. Hieu | E. Feddi | Huynh V. Phuc | B. D. Hoi | V. Ilyasov | K. Pham | N. V. Thuận | H. Phuc