We present the growth habits of GaAs and InGaAs quantum wells grown by organometallic‐molecular‐beam epitaxy (OM‐MBE) on (100) GaAs substrates with micron‐range corrugations aligned along the [011] direction. The growth habits resemble those obtained by molecular‐beam epitaxy, but with several obvious differences, which are discussed on the basis of their different growth mechanisms. These differences reduce the importance of the geometric factors for OM‐MBE which dominate in MBE. We observe lateral compositional variations in the InGaAs quantum well. The patterned samples exhibit enhanced luminescence efficiency compared to reference flat samples.