Leakage current compensation for a 450 nW, high-temperature, bandgap temperature sensor

The design of a 450nW bandgap temperature sensor in the 0 to 175°C range is presented. The design demonstrates a leakage current compensation technique that is useful for low-power designs where transistor performance is limited. The technique mitigates the effects of leakage in Brokaw bandgap references by limiting the amount of excess current that is entering the bases of the main bipolar pair due to leakage. Using this technique, Monte Carlo simulations show an improvement factor of 7.6 for the variation of the temperature sensitivity over the full temperature range. For the variation of the reference voltage, Monte Carlo simulations show an improvement factor of 2.3. Sensors built using this technique can be used to accurately monitor the temperature of power semiconductors since wireless temperature sensors become feasible with sufficiently low power consumption.

[1]  Wolfgang Fichtner,et al.  Measurement of the transient junction temperature in MOSFET devices under operating conditions , 2007, Microelectron. Reliab..

[2]  Abbes Amira,et al.  A low power temperature sensor based on a voltage to time converter cell , 2013, 2013 25th International Conference on Microelectronics (ICM).

[3]  M. Je,et al.  A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C , 2013, 2013 IEEE Asian Solid-State Circuits Conference (A-SSCC).

[4]  K. Mizuno,et al.  Analog CMOS integrated circuits for high-temperature operation with leakage current compensation , 1998, 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).

[5]  Substrate leakage current influence on bandgap voltage references in automotive applications , 2012, CAS 2012 (International Semiconductor Conference).

[6]  R. J. Widlar,et al.  New developments in IC voltage regulators , 1970 .

[7]  Amine Bermak,et al.  A Passive RFID Tag Embedded Temperature Sensor With Improved Process Spreads Immunity for a -30°C to 60°C Sensing Range. , 2014 .

[8]  Amine Bermak,et al.  A Passive RFID Tag Embedded Temperature Sensor With Improved Process Spreads Immunity for a $-{\hbox {30}}^{\circ}{\hbox {C}}$ to 60$^{\circ}{\hbox {C}}$ Sensing Range , 2014, IEEE Transactions on Circuits and Systems I: Regular Papers.

[9]  Kofi A. A. Makinwa,et al.  A 40µW CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from −55°C to 200°C , 2013, 2013 Proceedings of the ESSCIRC (ESSCIRC).

[10]  A. Brokaw,et al.  A simple three-terminal IC bandgap reference , 1974 .

[11]  Peter Tavner,et al.  Condition Monitoring for Device Reliability in Power Electronic Converters: A Review , 2010, IEEE Transactions on Power Electronics.

[12]  G. Nicoletti,et al.  Fast power cycling test of IGBT modules in traction application , 1997, Proceedings of Second International Conference on Power Electronics and Drive Systems.