论文信息 - Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces - 字舞流文

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

E. Vogel | Hyunchul Kim | R. Wallace | C. Hinkle | M. Milojević | Jiyoung Kim | F. Aguirre-Tostado