Compensation and doping effects in heavily helium-radiated silicon for power device applications

Abstract The formation of defects modifying the effective doping concentration of helium-radiated p+–n−–n+ and p+–p−–n+ silicon diodes is analyzed as a function of the annealing temperature. After irradiation with helium at high energy levels and annealing at 220 °C, the probable formation of divacancy clusters increases the number of charged-acceptor states in a space-charge region. Capacitance-Voltage and Spreading-Resistance Profile measurements show that annealing at 350 °C results in the formation of an acceptor-like defect that deep level transient spectroscopy measurements suggest can be tentatively attributed to the V2O or V4/V5 centre. Annealing at 430 °C results in the disappearance of the acceptor-like defect. Instead, pronounced donor formation in a range close to the penetration depth of the helium ions is observed. The influence of these effects on device characteristics is discussed.

[1]  R. Kassing,et al.  The influence of recombination center data on the I‐V characteristics of silicon p+‐i‐n+ diodes , 1977 .

[2]  P. Hazdra,et al.  Divacancy profiles in MeV helium irradiated silicon from reverse I–V measurement , 1999 .

[3]  J. Guldberg,et al.  Electron trap annealing in neutron transmutation doped silicon , 1977 .

[4]  F. Robb,et al.  Increasing the switching speed of high-voltage IGBTs , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[5]  Nando Kaminski,et al.  1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient , 1999 .

[7]  G. Schmidt.  BOUNDARY INTEGRAL OPERATORS FOR PLATE BENDING INDOMAINS WITH CORNERSGUNTHER SCHMIDTWEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS , 1999 .

[8]  Jan Vobecky,et al.  Optimization of power diode characteristics by means of ion irradiation , 1996 .

[9]  K. Gill,et al.  Bulk damage effects in irradiated silicon detectors due to clustered divacancies , 1997 .

[10]  G. Wertheim,et al.  Transient Recombination of Excess Carriers in Semiconductors , 1958 .

[11]  A. Hallén,et al.  Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si , 2002 .

[12]  S. D. Brotherton,et al.  Defect production and lifetime control in electron and γ‐irradiated silicon , 1982 .

[13]  Josef Lutz,et al.  Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes , 2004, Microelectron. J..

[14]  K. Satoh,et al.  8 kV/3.6 kA light triggered thyristor , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.