The effect of strain on the valence band structure of InAs(100)

Thin pseudomorphic layers of InAs were grown on selected III–V (100) substrates to ascertain the effect of the variation of the in‐plane biaxial stress on its valence band density of states. The range over which the stress varies is 6.7% compression to 7% tension. The layers were grown by molecular beam epitaxy using the migration enhanced epitaxy technique. Surface sensitive ultraviolet photoemission spectroscopy showed a strong modification of the valence band (VB) over the chosen stress range. Strain induced shifts in the energy separation of the VB maximum and the spectral feature related to contributions from the X3 and L1 Brillouin zone critical points were observed to be nonmonotonic as a function of biaxial stress.