论文信息 - Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors - 字舞流文

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

A. Allerman | J. Kim | F. Ren | S. Pearton | Y. Hsieh | A. Baca | E. Patrick | M. Law | Ya-Hsi Hwang | Gwangseok Yang | H. Kim | C. Sanchez | Shun Li | Yuyin Xi | J. Kim