A Novel 2.5–3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 µ m CMOS

Aiming for the simultaneous realization of constant gain, accurate input and output impedance matching and minimum noise figure (NF) over a wide frequency range, the circuit topology and detailed design of wide broadband low noise amplifier (LNA) are presented in this paper. A novel 2.5–3.1GHz wide-band LNA with unique characteristics has been presented. Its design and layout are done by TSMC 0.18 µ m technology. Common gate stage has been used to improve input matching. In order to enhance output matching and reduce the noise as well, a buffer stage is utilized. Mid-stages which tend to improve the gain and reverse isolation are exploited. The proposed LNA achieves a power gain of 15.9dB, a NF of 3.5dB with an input return loss less than − 11.6, output return loss of − 19.2 to − 19 and reverse isolation of − 38dB. The LNA consumes 54.6mW under a supply voltage of 2V while having some acceptable characteristics.

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