论文信息 - Reliability study of 850 nm VCSELs for data communications

Reliability study of 850 nm VCSELs for data communications

We present reliability results for 850 nm Vertical Cavity Surface Emitting Laser (VCSEL) devices. Hundreds of parts from multiple wafer lots and package styles were subjected to burn-in for thousands of hours at various temperatures and currents, yielding more than one million device-hours of data. Possible failure mechanisms are also discussed.

R.A. Morgan | M.K. Hibbs-Brenner | R.A. Hawthorne | J.K. Guenter | D.N. Granville

[1] Werner Dr Schairer,et al. Light emitting diodes: an introduction , 1986 .

[2] Mitsuo Fukuda,et al. Reliability and degradation of semiconductor lasers and LEDs , 1991 .

[3] Jeff W. Scott,et al. Analysis of VCSEL degradation modes , 1996, Photonics West.

[4] Chi-Shain Hong,et al. VCSEL optical subassembly for avionics fiber optic modules , 1996, Photonics West.

[5] Mary K. Hibbs-Brenner,et al. Reliability of proton-implanted VCSELs for data communications , 1996, Photonics West.

[6] Chang-Cherng Wu,et al. RELIABILITY OF PROTON IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASERS , 1994 .

[7] C. L. Zipfel,et al. Chapter 6 Light-Emitting-Diode Reliability , 1985 .

[8] S. Bounnak,et al. 200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.

[9] P. Petroff,et al. Spectrally-filtered electroluminescence of vertical-cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.