论文信息 - Evaluation of a single-pixel one-transistor active pixel sensor for low-dose indirect-conversion X-ray imaging

Evaluation of a single-pixel one-transistor active pixel sensor for low-dose indirect-conversion X-ray imaging

We designed and fabricated a dual-gate photosensitive TFT with active amorphous silicon thickness of 240nm and W/L ratio of 250μm/20μm by using a conventional six-mask photography microfabrication process. A single-pixel sensor was tested under different light conditions to mimic the real situation of X-ray exposure via the scintillator. The results demonstrate the capability of using dual-gate photosensitive TFT to acquire an X-ray image indirectly.

Kai Wang | Hai Ou | Jun Chen | Xinghui Liu

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