Improved forward‐voltage p/n junction space‐charge region capacitance based on time‐domain reasoning

The time‐domain reasoning employed in deriving a previous p/n junction space‐charge region capacitance model is elaborated for semiconductor p/n junctions under forward voltage. The previous model is improved by defining the applicable voltage range and by discussing high‐injection effects. Results obtained from this model agree well with experimental and numerical results obtained previously. This treatment also provides the dependence of the space‐charge region thickness at large forward voltage.

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