Formation of precipitates in heavily boron doped 4H-SiC
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[1] H. Bleichner,et al. Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material , 2001 .
[2] W. J. Choyke,et al. Photoluminescence and transport studies of boron in 4H SiC , 1998 .
[3] N. Nordell,et al. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC , 1996 .
[4] Philip G. Neudeck,et al. Site‐competition epitaxy for superior silicon carbide electronics , 1994 .