High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant

P‐type room‐temperature conductivities as high as 50/Ω cm are achieved in cubic GaN layers by the concept of reactive codoping. We use Be as the acceptor species and O as the reactive donor to render isolated Coulomb scatterers into dipole scatterers. This concept allows us to achieve high hole mobilities and thus p‐type conductivities.