论文信息 - Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm - 字舞流文

Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

S. Rajan | W. Lu | Asif Khan | M. Gaevski | H. Xue | S. H. Sohel | Shahab Mollah | K. Hussain | T. Razzak | V. Talesara