PERFORMANCE ANALYSIS OF CNTFET AND MOSFET FOCUSING CHANNEL LENGTH, CARRIER MOBILITY AND BALLISTIC CONDUCTION IN HIGH SPEED SWITCHING

Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this revi ew, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor (MOSFET). At first, we have discuss ed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature o f ballistic transport and profound impact of gate capacitance along with dielectric constant on transconductance have also have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed switching devices. Finally, a comparative study on the characteristics of contact resistance over switching capacity between CNTFET and MOSFET has been addressed.

[1]  L. Anghel,et al.  CNTFET basics and simulation , 2006, International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006..

[2]  Arnaud Bournel,et al.  Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance , 2008 .

[3]  Phaedon Avouris.  Carbon nanotube electronics and opto-electronics , 2004 .

[4]  M. Lundstrom,et al.  Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[5]  Jing Guo,et al.  Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics , 2004 .

[6]  A. Javey.  Carbon Nanotube Field-Effect Transistors , 2009 .

[7]  Siegfried Selberherr,et al.  Tunneling CNTFETs , 2007 .

[8]  A. Chaudhry,et al.  Mobility Models for Unstrained and Strained Silicon MOSFETS: A Review , 2011 .

[10]  Source/Drain Parasitic Resistance Role and Electrical Coupling Effect in sub 50nm MOSFET Design , 2002, 32nd European Solid-State Device Research Conference.

[11]  D.S. Yaney,et al.  Short-channel effects in MOSFET's , 1985, IEEE Electron Device Letters.

[12]  C. Berger,et al.  Room Temperature Ballistic Conduction in Carbon Nanotubes , 2002, cond-mat/0211515.

[13]  Rasmita Sahoo,et al.  Simulations of Carbon Nanotube Field Effect Transistors , 2009 .

[14]  N. Goldsman,et al.  Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes , 2003 .

[15]  Shinobu Fujita,et al.  Modeling and analysis of circuit performance of ballistic CNFET , 2006, 2006 43rd ACM/IEEE Design Automation Conference.

[16]  Michael Schroter,et al.  Analysis of the frequency dependent gate capacitance in CNTFETs , 2012 .

[17]  Ping Keung Ko,et al.  A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation , 1997 .

[18]  S.Heinze,et al.  Carbon Nanotubes as Schottky Barrier Transistors , 2002, cond-mat/0207397.

[19]  P. Desgreys,et al.  Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances , 2006, 0708.1465.

[20]  Mark S. Lundstrom,et al.  Theory of ballistic nanotransistors , 2003 .

[21]  Mark S. Lundstrom,et al.  A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors , 2003, IEEE Transactions on Electron Devices.

[22]  Karlheinz Schwarz,et al.  The interface between silicon and a high-k oxide , 2004, Nature.

[23]  White,et al.  Are fullerene tubules metallic? , 1992, Physical review letters.

[24]  Jing Guo,et al.  Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors , 2002, Digest. International Electron Devices Meeting,.

[25]  C. Dekker.  Carbon nanotubes as molecular quantum wires , 1999 .

[26]  P. Dollfus,et al.  Influence of capacitive effects on the dynamic of a CNTFET by Monte Carlo method , 2007 .

[27]  Mark G. Karpovsky,et al.  Influence of metallic tubes on the reliability of CNTFET SRAMs: error mechanisms and countermeasures , 2011, GLSVLSI '11.

[28]  C. Gontrand,et al.  Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors , 2009 .

[29]  Pierre Legagneux,et al.  Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors , 2006 .

[30]  Andre K. Geim,et al.  The rise of graphene. , 2007, Nature materials.

[31]  Jing Guo,et al.  Heat dissipation in carbon nanotube transistors , 2006 .