Investigations of silicon wafer bonding using thin Al and Sn films for heterogeneous integration

Metallic wafer bonding has emerged as a key technology for microelectronics and MEMS. The Si wafers with Al metallization film on surface are bonded by applying Sn film as intermediate layer, aiming at the application of heterogeneous integration. Averaged shear strength of 9.9 MPa is realized at bonding temperature as low as 280°C with bonding time as short as 3 minutes under the bonding pressure of 0.25 MPa. Interface microstructure and fracture surface analysis were carried out to understand the underlying mechanism.

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