New paradigm of silicon technology

We present a new paradigm of Si technologies to establish a gigahertz-operation gigascale integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high-speed signal propagation properties in the practical LSI structure, a gas-isolated-interconnect high-k gate dielectric metal-gate metal-substrate silicon-on-insulator (SOI) LSI structure is proposed as a possible solution for a future gigahertz GSI system LSI, where the clock rate is improved up to beyond 10 GHz and the minimum feature size is reduced down to 0.035 /spl mu/m in keeping with the continuous progress of the LSI's speed performance. Perfect scientific manufacturing free from fluctuations consisting of total low-temperature high-quality and high-speed processes based on very high-density plasma having very low electron temperatures is essential to realize them.

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