A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

Abstract In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of −16 dBm. The noise figure is 0.4 dB with an input return loss greater than −10 dB and an output return loss of −12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.

[1]  Yeo Kiat Seng,et al.  A modified architecture used for input matching in CMOS low-noise amplifiers , 2005 .

[2]  B. Nauta,et al.  Achieving Wideband sub-1dB Noise Figure and High Gain with MOSFETs if Input Power Matching is not Required , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[3]  Mustapha C. E. Yagoub,et al.  Modélisation Petit Signal du Transistor PHEMT et Analyse des Performances Hyperfréquences , 2009 .

[4]  Leonid Belostotski,et al.  Wide-band CMOS low noise amplifier for applications in radio astronomy , 2006, 2006 IEEE International Symposium on Circuits and Systems.

[5]  S. Arshad,et al.  Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach , 2008 .

[6]  Mustapha C. E. Yagoub,et al.  Low noise amplifier design for radioastronomy application , 2009 .

[7]  Zuo-Min Tsai,et al.  A noise optimization formulation for CMOS low-noise amplifiers with on-chip low-Q inductors , 2006, IEEE Transactions on Microwave Theory and Techniques.

[8]  D. Pozar.  Microwave Engineering , 1990 .

[9]  G. Gonzalez.  Microwave Transistor Amplifiers: Analysis and Design , 1984 .

[10]  Leonid Belostotski,et al.  Sub-0.2 dB Noise Figure Wideband Room-Temperature CMOS LNA With Non-50 $\Omega$ Signal-Source Impedance , 2007, IEEE Journal of Solid-State Circuits.

[11]  Sung Min Park,et al.  1.25-Gb/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applications , 2004, IEEE Journal of Solid-State Circuits.

[12]  Danielle George,et al.  Novel High-Breakdown InGaAs/InAlAs pHEMTs for Radio Astronomy Applications , 2006 .

[13]  Zhang Yanxiong.  Design of Wideband Low-noise Amplifier , 2012 .

[14]  H. Zirath,et al.  4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology , 2006, 2006 European Microwave Integrated Circuits Conference.

[15]  R. Kaul,et al.  Microwave engineering , 1989, IEEE Potentials.

[16]  Trung-Kien Nguyen,et al.  CMOS low-noise amplifier design optimization techniques , 2004, IEEE Transactions on Microwave Theory and Techniques.

[17]  M. Kuijk,et al.  A 6.5-kV ESD-protected 3-5-GHz ultra-wideband BiCMOS low-noise amplifier using interstage gain roll-off compensation , 2005, IEEE Transactions on Microwave Theory and Techniques.

[18]  Wouter A. Serdijn,et al.  GaAs 0.5 dB NF dual-loop negative-feedback broadband low-noise amplifier IC , 2005 .

[19]  S. Boulay,et al.  Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications , 2008 .