35-40 GHz monolithic VCOs utilizing high-speed GaInP/GaAs HBTs

Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCOs) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBTs) as active devices and varactor diodes using the base-collector junction of the HBT structure are implemented in the VCOs. The HBTs have an emitter area of 2×1.5 μm×10 μm and incorporate a highly carbon doped base layer and a thin GaInP hole barrier. Oscillators with center frequencies of 35, 37, and 40 GHz exhibit tuning ranges of up to 1 GHz and typical output powers of 1-3.5 dBm. Best measured phase-noise at 1 MHz off carrier is -107 dBc/Hz.

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