Electrical Performance of Ge Devices

The chapter reviews the electrical performance of basic structures such as MOS capacitors and pn diodes, which gives an insight in the performance parameters and a better understanding of the basic mechanisms involved. A good control of the performance of these building blocks is essential for optimizing the transistor performance. The chapter explains some basic measurement techniques. In this chapter, the two major building blocks of the Ge-based MOSFET (metal-oxide-semiconductor field-effect transistor) are reviewed––namely, the p-n junction and the Ge/insulator/metal gate stack. The chapter also outlines the basic principles of operation of these devices.