Continuously deposited anti-reflection double layer of silicon nitride and silicon oxynitride for selective emitter solar cells by PECVD

[1]  DongSeop Kim,et al.  Influence of laser damage on the performance of selective emitter solar cell fabricated using laser doping process , 2015 .

[2]  DongSeop Kim,et al.  Laser etch back process to fabricate highly efficient selective emitter c-Si solar cells , 2014 .

[3]  R. Brendel,et al.  Firing stability of SiNy/SiNx stacks for the surface passivation of crystalline silicon solar cells , 2012 .

[4]  N. Bérerd,et al.  Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition , 2010 .

[5]  E. Fourmond,et al.  Sioxny / sinx double antireflection layer for multicrystalline silicon solar cells , 2009 .

[6]  E. Fourmond,et al.  Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation , 2008 .

[7]  A. Rohatgi,et al.  Study of direct PECVD SiN/sub x/-induced surface emitter and bulk defect passivation in p-type silicon solar cells , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..

[8]  Yongjin Wang,et al.  Optimization of PECVD silicon oxynitride films for anti-reflection coating , 2003 .

[9]  Á. Prado.  Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance , 2002 .

[10]  K. Worhoff,et al.  Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics , 1999 .

[11]  M. I. Alayo,et al.  High quality low temperature DPECVD silicon dioxide , 1997 .

[12]  Thomas Lauinger,et al.  Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation , 1996 .

[13]  R. Hezel,et al.  Low‐Temperature Surface Passivation of Silicon for Solar Cells , 1989 .