A novel vertical ultra thin Sal MOSFET

A fully depleted lean channel transistor (DELTA) havinga new "gate-structure and vertical ultra thin SOl structure with selective field oxide is reported. In the deep submicron region, selective oxidation is useful for achieving SOl isolation. It provides a high qU'tlity crystal and a S-SiO, interface as good as those of conventional bulk single. c rystal devices. Using experiments and simulation, it was shown that the new gate structure of DELTA has effect ive channel controllabi I i ty and its vertical ul tra thin «0. Z /.tm) SOl structure provides superior device characteristics. e. g. the reduction of short channel effects, minimized subthreshold swing. and high transconductance.