Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

In this paper we propose an analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures. The 1∕f noise is ascribed to the superimposition of random telegraph signals due to elastic electron tunneling from the inversion layer to oxide traps and vice versa. The model is based on the observation that an electron trapped in the dielectric locally increases the potential barrier thus reducing the current density. The local reduction in the current density is described in terms of an effective blocking area where the current density is null when the electron is trapped. The radius of the blocking area depends smoothly on the trap spatial position and on the applied voltage, and it is roughly equal to half of the oxide thickness. Detrapping to the gate is not considered. Numerical simulations show that it is important only in a thin intermediate region inside the oxide and that the corresponding power contribution is negligible respect to that generated by traps close...

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