论文信息 - Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers - 字舞流文

Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers

M. Rodwell | A. Gossard | V. Chobpattana | S. Stemmer | J. Law | A. Carter | Sanghoon Lee | Cheng-Ying Huang | D. Cohen-Elias