Recent results from the Berkeley 0.3-NA EUV microfield exposure tool

Operating as a SEMATECH resist test center, the Berkeley 0.3-NA EUV microfield exposure tool continues to play a crucial role in the advancement of EUV resists and masks. Here we present recent resist-characterization results from the tool as well as tool-characterization data. In particular we present lithographic-based aberration measurements demonstrating the long-term stability of the tool. We also describe a recent upgrade to the tool which involved redesign of the programmable coherence illuminator to provide improved field uniformity as well as a programmable field size.

[1]  Iwao Nishiyama,et al.  Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA) , 2005, SPIE Advanced Lithography.

[2]  N. Ceglio,et al.  Undulator radiation for at-wavelength interferometry of optics for extreme-ultraviolet lithography. , 1993, Applied optics.

[3]  M. Booth,et al.  High-resolution EUV imaging tools for resist exposure and aerial image monitoring , 2005, SPIE Advanced Lithography.

[4]  Farhad Salmassi,et al.  Spin-on-glass coatings for the generation of superpolished substrates for use in the extreme-ultraviolet region. , 2006, Applied optics.

[5]  Kenneth A. Goldberg,et al.  Lithographic characterization of low-order aberrations in a 0.3-NA EUV microfield exposure tool , 2006, SPIE Advanced Lithography.

[6]  Costas J. Spanos,et al.  Resist-based measurement of the contrast transfer function in a 0.3 numerical aperture extreme ultraviolet microfield optic , 2006 .

[7]  Kenneth A. Goldberg,et al.  Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic , 2004, SPIE Advanced Lithography.

[8]  Kenneth A. Goldberg,et al.  Characterization of the synchrotron-based 0.3 numerical aperture extreme ultraviolet microexposure tool at the Advanced Light Source , 2005 .

[9]  Peng Zhang,et al.  Linewidth roughness reduction at the 55 nm node through combination of classical process optimization and application of surface conditioner solutions , 2006, SPIE Advanced Lithography.

[10]  Hans Meiling,et al.  First performance results of the ASML alpha demo tool , 2006, SPIE Advanced Lithography.

[11]  T. Wallow,et al.  Post-etch LER performance of novel surface conditioner solutions , 2006, SPIE Advanced Lithography.

[12]  Patrick P. Naulleau,et al.  Lithographic metrics for the determination of intrinsic resolution limits in EUV resists , 2007, SPIE Advanced Lithography.

[13]  Katsuhiko Murakami,et al.  Nikon EUVL development progress summary , 2006, SPIE Advanced Lithography.

[14]  Peng Zhang,et al.  Pattern collapse and line width roughness reduction by surface conditioner solutions for 248-nm lithography , 2005, SPIE Advanced Lithography.