First direct observation of EL2-like defect levels in annealed LT-GaAS

[1]  B. Ga,et al.  Electronic aspects of the optical-absorption spectrum of the EL2 defect in GaAs. , 1992 .

[2]  M. Melloch,et al.  Photoemission spectroscopy of GaAs:As photodiodes , 1992 .

[3]  Michael R. Melloch,et al.  Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures , 1990 .

[4]  Michael R. Melloch,et al.  Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy , 1990 .

[5]  Evans,et al.  Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band. , 1990, Physical review. B, Condensed matter.

[6]  J. Kortright,et al.  Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures , 1989 .

[7]  Chang,et al.  Metastability of the isolated arsenic-antisite defect in GaAs. , 1988, Physical review letters.

[8]  M. Manfra,et al.  New MBE buffer used to eliminate backgating in GaAs MESFETs , 1988, IEEE Electron Device Letters.

[9]  E. Fossum,et al.  Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer , 1987 .

[10]  M. Kamińska,et al.  Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors , 1982 .

[11]  G. Martin,et al.  Optical assessment of the main electron trap in bulk semi‐insulating GaAs , 1981 .

[12]  A. Chantre,et al.  Deep-level optical spectroscopy in GaAs , 1981 .

[13]  D. Bullett.  Density of states calculation for crystalline As and Sb , 1975 .

[14]  Vikram L. Dalal,et al.  Simple Model for Internal Photoemission , 1971 .

[15]  R. Fowler,et al.  The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures , 1931 .