EUVL practical mask structure with light shield area for 32nm half pitch and beyond
暂无分享,去创建一个
Tadahiko Takikawa | Youichi Usui | Hajime Aoyama | Naoya Hayashi | Takashi Kamo | Toshihiko Tanaka | Tsukasa Abe | Morio Hosoya | Tsutomu Shoki | Osamu Suga
[1] Minoru Sakamoto,et al. Development of new chrome blanks for 65-nm node and beyond , 2004, SPIE Photomask Technology.
[2] Hideki Morishima,et al. Path to the HVM in EUVL through the development and evaluation of the SFET , 2007, SPIE Advanced Lithography.
[3] Osamu Suga,et al. Effects of mask absorber thickness on printability in EUV lithography with high resolution resist , 2008, Photomask Japan.
[4] Osamu Suga,et al. Impact of mask absorber properties on printability in EUV lithography , 2007, SPIE Photomask Technology.
[5] Koji Kaneyama,et al. EUV resist development in Selete , 2008, SPIE Advanced Lithography.
[6] Takeru Kinoshita,et al. Study on exposure contrast of an EUV mask , 2003, Photomask Japan.
[7] Youichi Usui,et al. Process development of 6-in EUV mask with TaBN absorber , 2002, Photomask Japan.
[8] Naoya Hayashi,et al. Process development for EUV mask production , 2006, SPIE Photomask Technology.