All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh-Q (Q≃105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10−8 W, the quantum efficiency of this device reaches ∼10%.

[1]  A. Fujiwara,et al.  Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor , 2008 .

[2]  Masaya Notomi,et al.  Trapping and delaying photons for one nanosecond in an ultrasmall high-Q photonic-crystal nanocavity , 2007 .

[3]  T. Asano,et al.  Spontaneous-emission control by photonic crystals and nanocavities , 2007 .

[4]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[5]  Masaya Notomi,et al.  Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities , 2007 .

[6]  David A. B. Miller,et al.  Device Requirements for Optical Interconnects to Silicon Chips , 2009, Proceedings of the IEEE.

[7]  M. Notomi,et al.  Nonlinear and adiabatic control of high-Q photonic crystal nanocavities. , 2007, Optics express.

[8]  All-optical phase modulations in a silicon wire waveguide at ultralow light levels , 2009 .

[9]  Jeff F. Young,et al.  Nonlinear propagation of ultrafast 1.5 μm pulses in high-index-contrast silicon-on-insulator waveguides , 2004 .

[10]  Masaya Notomi,et al.  Optical bistable switching action of Si high-Q photonic-crystal nanocavities. , 2005, Optics express.

[11]  Qianfan Xu,et al.  12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators. , 2007, Optics express.

[12]  J. Bowers,et al.  Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product , 2009 .

[13]  M. Geis,et al.  Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response. , 2009, Optics express.

[14]  R. Soref,et al.  Electrooptical effects in silicon , 1987 .

[15]  Masaya Notomi,et al.  Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity. , 2009, Optics express.

[16]  Y. Liu,et al.  In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides , 2006, IEEE Photonics Technology Letters.

[17]  Marin Soljacic,et al.  Ultrafast photodetection in an all-silicon chip enabled by two-photon absorption , 2009 .

[18]  Hon Ki Tsang,et al.  Silicon waveguide two-photon absorption detector at 1.5 μm wavelength for autocorrelation measurements , 2002 .