The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics

The dielectric properties and bias temperature instability characteristics of in situ nitrogen incorporated ZrO x N y gate dielectrics were compared with those of ZrO 2 , HfO 2 , and HfO x N y . ZrO x N y showed a much smaller capacitance equivalent oxide thickness (1.43 nm) than ZrO 2 (2.13 nm) and exhibited a turn-around effect under a positive gate stress bias in n-type metal oxide semiconductor field-effect transistor, which is consistent with HfO x N y . However, compared to HfO x N y , ZrO x N y showed a significantly lower initial V th shift under a positive gate stress bias due to the lower number of shallow bulk traps related to oxygen vacancies.