Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon

[1]  Xiangyang Ma,et al.  Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon , 2017 .

[2]  A. Chroneos,et al.  Oxygen defect processes in silicon and silicon germanium , 2015 .

[3]  B. Svensson,et al.  Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion , 2014 .

[4]  A. Chroneos,et al.  Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective , 2012 .

[5]  Deren Yang,et al.  Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon , 2012 .

[6]  Deren Yang,et al.  Germanium-doped Czochralski silicon for photovoltaic applications , 2011 .

[7]  E. Simoen,et al.  Germanium doping for improved silicon substrates and devices , 2011 .

[8]  V. V. Emtsev,et al.  IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon , 2011 .

[9]  Xiangyang Ma,et al.  On the assumed impact of germanium doping on void formation in Czochralski-grown silicon , 2010 .

[10]  Deren Yang,et al.  Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon , 2010 .

[11]  V. Markevich,et al.  Trivacancy-oxygen complex in silicon: Local vibrational mode characterization , 2009 .

[12]  Xiangyang Ma,et al.  Impurity Engineering of Czochralski Silicon , 2009 .

[13]  V. V. Emtsev,et al.  Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium , 2009 .

[14]  H. Bracht,et al.  Impact of germanium on vacancy clustering in germanium-doped silicon , 2009 .

[15]  Liben Li,et al.  Crystal-originated particles in germanium-doped Czochralski silicon crystal , 2007 .

[16]  J. Härkönen,et al.  Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon , 2007 .

[17]  Xiangyang Ma,et al.  Germanium effect on oxygen precipitation in Czochralski silicon , 2004 .

[18]  S. Dannefaer,et al.  Annealing mechanisms of divacancies in silicon , 2003 .

[19]  S. Dannefaer,et al.  Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation , 2003 .

[20]  L. G. Fytros,et al.  Origin of infrared bands in neutron-irradiated silicon , 1997 .

[21]  H. Maes,et al.  Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes? , 1995 .

[22]  B. Pivac,et al.  Oxygen precipitation in silicon , 1995 .

[23]  Corbett,et al.  Divacancy acceptor levels in ion-irradiated silicon. , 1991, Physical review. B, Condensed matter.

[24]  G. Oehrlein,et al.  The mechanism of the enhancement in divacancy production by oxgyen during electron irradiation of silicon. I. Experimental , 1982 .

[25]  G. D. Watkins,et al.  DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER , 1961 .