We have fabricated a new lateral field emitter array, in-situ vacuum-sealed, which exhibits a low turn on voltage and a high transconductance value without any additional vacuum sealing process. The vacuum-sealed lateral FEA (VLFEA) is encapsulated during the fabrication process, so that field emission characteristics can be measured without any additional vacuum environments. Experimental current-voltage (I-V) characteristics show that the anode current is field emission current obeying the linearity of the Fowler-Nordheim (F-N) plot. The experimental turn-on voltage of about 9 V is in good agreement with the extracted one from the F-N plot. In order to verify the integrity of the vacuum sealed micro-cavity, we have measured the anode current of the VLFEA both in a high vacuum chamber and in an atmospheric environment and found that the structure is well sealed. The anode currents as a function of gate voltage of the Mo-sealed VLFEA are analyzed and transconductance is extracted. The experimental results show that the VLFEA has superior field emission characteristics, such as low turn-on voltage and high transconductance, and does not require any additional troublesome vacuum sealing.
[1]
C. Spindt,et al.
Field-emitter arrays for vacuum microelectronics
,
1991
.
[2]
W. J. Orvis,et al.
Field emission from tungsten-clad silicon pyramids
,
1989
.
[3]
R. Fowler,et al.
Electron Emission in Intense Electric Fields
,
1928
.
[4]
T. Utsumi,et al.
Vacuum microelectronics: what's new and exciting
,
1991
.
[5]
I. Brodie,et al.
Field-emitter-array development for microwave applications
,
1995,
Proceedings of International Electron Devices Meeting.
[6]
S. Wolf,et al.
Silicon Processing for the VLSI Era
,
1986
.
[7]
Dennis L. Polla,et al.
Planar‐processed tungsten and polysilicon vacuum microelectronic devices with integral cavity sealing
,
1993
.