Crystallization of amorphous silicon films using a multistep thermal annealing process
暂无分享,去创建一个
[1] H. Ishiwara,et al. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2 patterns , 1983 .
[2] R. Reif,et al. Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation , 1982 .
[3] S. Kokorowski,et al. Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films , 1982 .
[4] K. C. Russell. Nucleation in solids: The induction and steady state effects , 1980 .
[5] J. Bourgoin,et al. Crystallization in amorphous silicon , 1979 .
[6] U. Köster. Crystallization of amorphous silicon films , 1978 .
[7] L. Csepregi,et al. Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions , 1977 .
[8] T. Sigmon,et al. Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers , 1977 .
[9] T. Sigmon,et al. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si , 1975 .
[10] N. Blum,et al. The crystallization of amorphous silicon films , 1972 .