Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

A conventional approach of doping to control the bistable resistance switching in Yb<sub>2</sub>O<sub>3</sub> was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb<sub>2</sub>O<sub>3</sub> to Schottky type in YbTiO<sub>x</sub>. The program/erase cycles with successive readout operation over 10<sup>5</sup> cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85°C. The Ni/YbTiO<sub>x</sub>/TaN memory is a promising candidate to be integrated into future memory processes.

[1]  J. Lee,et al.  Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53, Ti0.47)O3 thin films , 2004 .

[2]  M. Tsai,et al.  Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment , 2011 .

[3]  F. Yeh,et al.  Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Dielectrics , 2009, IEEE Electron Device Letters.

[4]  J. Liu,et al.  High-density MIM capacitors using Al2O3 and AlTiOx dielectrics , 2002, IEEE Electron Device Letters.

[5]  Switching processes and dielectric breakdown in NiO and NiO(Li) thin films , 1974 .

[6]  A. Chin,et al.  High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics , 2002 .

[7]  N. Xu,et al.  Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application , 2009, IEEE Electron Device Letters.

[8]  Sungho Kim,et al.  Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications , 2008, IEEE Electron Device Letters.

[9]  Chen-Hsi Lin,et al.  Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin Films , 2007, IEEE Transactions on Electron Devices.

[10]  Hyunsang Hwang,et al.  Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications , 2009, IEEE Electron Device Letters.

[11]  M. Kozicki,et al.  Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ , 2007, IEEE Transactions on Electron Devices.

[12]  Peng Zhou,et al.  Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance , 2010, IEEE Electron Device Letters.

[13]  T. Pan,et al.  Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers , 2010 .

[14]  U-In Chung,et al.  Improvement of resistive memory switching in NiO using IrO2 , 2006 .

[15]  Frederick T. Chen,et al.  Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap , 2010, IEEE Electron Device Letters.

[16]  M. Terai,et al.  Memory-State Dependence of Random Telegraph Noise of $ \hbox{Ta}_{2}\hbox{O}_{5}/\hbox{TiO}_{2}$ Stack ReRAM , 2010, IEEE Electron Device Letters.

[17]  C. Hu,et al.  Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices , 2007, IEEE Electron Device Letters.

[18]  J.F. Kang,et al.  Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology , 2006, 2009 Symposium on VLSI Technology.