Photoresist line-edge roughness analysis using scaling concepts

This paper focuses on the problem of obtaining and characterizing the edge roughness of photoresist lines by analyzing top-down SEM images. AN off-line image analysis algorithm detecting the line edge and an edge roughness characterization scheme, based on scaling analysis, are briefly described. As a result, it is suggested that apart from the rms value of the edge, two more roughness parameters are needed: the roughness exponent α and the correlation length ξ. These characterize the spatial complexity of the edge and determine the dependence of sigma on the length of the measured edge. Completing our previous work on the dependencies of the roughness parameters on various image analysis options, we examine the effect of the type of noise smoothing filter. Then, a comparative study of the roughness parameters of the left and right edges of resist lines is conducted, revealing that the sigma values of the right edges are larger than those of left edges whereas the roughness exponents and the correlation lengths do not show such trend. Finally, the relation between line width roughness and line edge roughness is thoroughly investigated with interesting conclusions.

[1]  Angeliki Tserepi,et al.  Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis , 2003 .

[2]  Angeliki Tserepi,et al.  Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors , 2003 .

[3]  Angeliki Tserepi,et al.  Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images , 2003 .

[4]  Angeliki Tserepi,et al.  Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane , 2003 .

[5]  William Lawrence Spatial frequency analysis of line-edge roughness in nine chemically related photoresists , 2003, SPIE Advanced Lithography.

[6]  Andrew R. Brown,et al.  Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs , 2001 .

[7]  K. Ronse,et al.  Metrology method for the correlation of line edge roughness for different resists before and after etch , 2001 .

[8]  Kevin Barraclough,et al.  I and i , 2001, BMJ : British Medical Journal.

[9]  A. Barabasi,et al.  Fractal concepts in surface growth , 1995 .

[10]  Shiying Xiong,et al.  Gate line-edge roughness effects in 50-nm bulk MOSFET devices , 2002, SPIE Advanced Lithography.

[11]  S. C. Palmateer,et al.  Comparison of metrology methods for quantifying the line edge roughness of patterned features , 1999 .

[12]  Toh-Ming Lu,et al.  Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications , 2001 .