论文信息 - n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

Abstract Heterojunction bipolar transistor (HBTs) based on Al0.15Ga0.85 N/6H–SiC heterojunction was fabricated. Room-temperature current–voltage (I–V) characteristics of n-Al0.15Ga0.85 N/p-6H–SiC emitter–base heterojunction exhibited good rectifying behavior with a forward current 5 × 10−2 A and reverse current 3 × 10−9 A at 10 V and −10 V, respectively. Analysis of the temperature dependent I–V characteristics of this heterojunction revealed a barrier height of 1.1 eV. The fabricated n-Al0.15Ga0.85 N/p-SiC/n-SiC bipolar transistor did not exhibit common-emitter operation, however, common-base operation was observed with current gain β = IC/IB ranging in 75–100.

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