SiGe virtual substrate N-channel heterojunction MOSFETs

Heterojunction MOSFETs (HMOSFETs), grown on a virtual substrate of SiGe and having a strained silicon channel, have been fabricated. A conventional silicon MOS process was used, including dry thermal oxidation and high temperature source-drain annealing. Good transistor I-V characteristics were obtained for devices having drawn gate lengths between 150 nm and 10 µm and an extrinsic transconductance of 220 mS mm-1 is reported for the 150 nm gate length device. Technology computer aided design (TCAD) is used to determine that the bulk low field mobility of the strained silicon which forms the channel is 1500 cm2 V-1 s-1, while the source-drain series resistance is 1.5 mm. Good agreement between simulated and experimental I-V data is obtained.

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