In this paper, we adopt solution/evaporation hybrid processes to fabricate white organic light emitting diodes (WOLED) with a light-emitting area of 1.5 cm * 1.5 cm. The hole injection layer (PEDOT:PSS), p-type doped hole transport layer (NPB:F4-TCNQ), and emitting layer (UBH-215:UBD-07:DBP) are coated using the solution process while the electron transport layer (TPBI), LiF, and Al are coated through vacuum thermal evaporation. The light-emitting layer is a fluorescent material (UBH-215 as host) that combines the blue fluorescent material UBD-07 and the red fluorescent material DBP for a dual band light-emitting diodes. We found that if the red DBP doping concentration is too high, the overall emitting color tends toward reddish, and the luminance efficiency decreases. For WOLEDs whose red DBP doping concentration is 0.25%, the luminance reaches 192 cd/m2, and the current efficiency 0.94 cd/A at 9V voltage. Introducing a hole injection layer between the ITO and emitting layer can enhance both the luminance and efficiency of a WOLED. In addition to the hole injection layer, it is found that inserting p-type doped HTL (NPB:F4-TCNQ) between HIL and EML using the spin- coating method can also improve luminance and efficiency. Furthermore, by optimizing and adjusting the dopant ratio and thickness of p-type doped HTL, the luminance reaches 393.1 cd/m2, the current efficiency reaches 1.32 cd/A under 9V voltage, and the OLED lifetime (half-value period) increases from the original 0.8 hours to 2 hours.
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