Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study

Monte Carlo simulations of current fluctuation in Si n-i-n diode structures are carried out with various lengths of the intrinsic (channel) region so that electron transport under diffusive and quasi-ballistic regimes is covered. It is shown that a new current fluctuation mode associated with the fluctuation in the number of electrons in the channel region appears in sub-0.1 µm device structures. This is caused by the diffusion of high-energy electrons in the anode n-doped region, and is characteristic of sub-0.1 µm device structures since high-energy electrons in the anode originate from quasi-ballistic transport in the channel.