A model for field‐sensitive interface states

Oxygen derived point defects called Intimate‐Valence‐Alternation‐Pairs (IVAP) apear to be able to account for the time, temperature, and field dependence of the generation of field‐sensitive interface states. The theory and properties of IVAP defects in SiO2 are described. A model for the observed changes in the capacitance voltage characteristics of Metal‐Oxide‐Semiconductor structures based on the existence of these defects is proposed. Finally the model is compared to existing data from the literature on the buildup of interface states caused by charge injection or ionizing radiation.

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