Simulation of turn-off dynamics in fast recovery power diodes

A model of a fast recovery power diode has been developed and implemented into a simulation program. The model is based on the physical process in the semiconductor device, no curve fitting parameters are used. The theory of turn-off effects of the power diode are described in detail. Comparison between measurement and simulation confirm that the model has a good agreement with reality. It is a useful tool for investigations in power electronic circuit design including RC-snubbers. >