Numerical Simulation of Species Segregation and 2D Distribution in the Floating Zone Silicon Crystals
暂无分享,去创建一个
[1] Lijun Liu,et al. Effect of cusp magnetic field on the turbulent melt flow and crystal/melt interface during large-size Czochralski silicon crystal growth , 2021 .
[2] J. Jung,et al. Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation , 2020, Processes.
[3] K. Kakimoto,et al. Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon , 2020 .
[4] Sabine Zakel,et al. A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constant , 2017 .
[5] A. Muiznieks,et al. Hydrodynamical aspects of the floating zone silicon crystal growth process , 2014 .
[6] R. Menzel. Growth Conditions for Large Diameter FZ Si Single Crystals , 2013 .
[7] H. Riemann,et al. Float-Zone silicon crystal growth at reduced RF frequencies , 2012 .
[8] E. Cardoso,et al. Determination of the effective distribution coefficient (K) for silicon impurities , 2012 .
[9] K. Shim,et al. Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process , 2008 .
[10] J. Garandet. New Determinations of Diffusion Coefficients for Various Dopants in Liquid Silicon , 2007 .
[11] Bok-Cheol Sim,et al. Boron segregation control in silicon crystal ingots grown in Czochralski process , 2006 .
[12] G. Gerbeth,et al. Breakdown of Burton-Prim-Slichter approach and lateral solute segregation in radially converging flows , 2005, physics/0605139.
[13] T. Wetzel,et al. Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth , 2004 .
[14] A. Mühlbauer,et al. Modelling of phase boundaries for large industrial FZ silicon crystal growth with the needle-eye technique , 2003 .
[15] A. Mühlbauer,et al. Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth , 2000 .
[16] F. Durand,et al. Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes , 2000 .
[17] K. Mills,et al. Thermophysical Properties of Silicon , 2000 .
[18] A. Mühlbauer,et al. Numerical modelling of the microscopic inhomogeneities during FZ silicon growth , 1999 .
[19] A. Muiznieks,et al. Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals , 1997 .
[20] D. Hurle,et al. Effective Distribution Coefficient of Silicon Dopants During Magnetic Czochralski Growth , 1985 .
[21] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[22] B. Kolbesen,et al. Carbon in silicon: Properties and impact on devices , 1982 .
[23] L. Wilson. Analysis of microsegregation in crystals , 1980 .
[24] V. Eremenko,et al. Dissolution of polycrystalline silicon carbide in liquid silicon , 1972 .
[25] K. Milliken. Simplification of a Molten Zone Refining Formula , 1955 .
[26] R. Prim,et al. The Distribution of Solute in Crystals Grown from the Melt. Part I. Theoretical , 1953 .
[27] A. Sabanskis,et al. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth , 2017 .
[28] B. Nacke,et al. 3D unsteady modelling of the melt flow in the FZ silicon crystal growth process , 2007 .