A new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE)

In this paper, a new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE) concept is presented which has been investigated by device simulation. The IDEE concept in combination with a Controlled Injection of Backside Holes (CIBH) cathode structure improves substantially the trade-off between surge current capability, turn-off losses and turn-off ruggedness. The IDEE diode is characterized by an anode-side highly doped p+-region, which is interrupted by n-doped channels. In contrast to conventional emitters, the IDEE anode region provides a low emitter efficiency at low currents and a high emitter efficiency at high currents. This feature leads to a reduced anode side plasma density and improved reverse recovery at low current densities; on the other hand the diode's surge current capability is significantly enhanced.

[1]  Elmar Falck,et al.  Influence of joule heating on current filaments induced by avalanche injection , 2006 .

[2]  R. Sittig,et al.  Current filamentation in bipolar power devices during dynamic avalanche breakdown , 2000 .

[3]  Ag Munich.  A Novel Diode Structure with Controlled Injection of Backside Holes(CIBH) , 2006 .

[4]  J. Lutz,et al.  On the formation of stationary destructive cathode-side filaments in p+-n−-n+ diodes , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[5]  J. Lutz,et al.  Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ - $\hbox{n}^{+}$ Diodes , 2008, IEEE Transactions on Electron Devices.

[6]  Massimo Rudan,et al.  Impact-ionization in silicon at large operating temperature , 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

[7]  B.J. Baliga,et al.  Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier , 1987, IEEE Electron Device Letters.

[8]  Josef Lutz,et al.  Effects of metallisation and bondfeets in 3.3 kV free-wheeling diodes at surge current conditions , 2008 .

[9]  Josef Lutz,et al.  Effects of negative differential resistance in high power devices and some relations to DMOS structures , 2010, 2010 IEEE International Reliability Physics Symposium.

[10]  F. Sawitzki,et al.  Improved recovery of fast power diodes with self-adjusting p emitter efficiency , 1989, IEEE Electron Device Letters.