Chemical identification of deep energy levels in Si:Se

Profiles of deep energy states in selenium diffused silicon p+n junctions have been studied by junction capacitance techniques and secondary ion mass spectroscopy (SIMS). In both cases similar profiles are obtained. Since the profiles measured by SIMS are due to selenium atoms, it is concluded that selenium is responsible for the two dominant energy levels previously investigated in Si:Se by junction space‐charge techniques.

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