论文信息 - On the threshold voltage shift after hot carrier injection in deep submicron n-channel MOSFETs: a quasi-uniform approach

On the threshold voltage shift after hot carrier injection in deep submicron n-channel MOSFETs: a quasi-uniform approach

Abstract Threshold voltage Vth instabilities observed in deep submicron n-MOSFETs after Hot Carrier Injection (HCI) are analyzed in details. A “quasi-uniform” approach for analyzing degradation effects is proposed along with a study of the “turn-over” phenomenon. Besides, the experimental Vth variation is accurately modeled.

[1] T. Ma,et al. Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides , 1992, IEEE Electron Device Letters.

[2] Manabu Itsumi,et al. Electron trapping in thin films of thermal SiO2 at temperatures between 30 and 300 K , 1983 .

[3] On the charge build-up mechanisms in gate dielectrics , 1994 .

[4] Massimo V. Fischetti,et al. Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection , 1985 .

[5] G. Groeseneken,et al. Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation , 1989 .